2SK3079ATE12LQ
- Manufacturer Toshiba
- Part Number 2SK3079ATE12LQ
- Description RF MOSFET Transistors N-Ch Radio Freq 3A 20W 10V VDSS
- Category RF MOSFET Transistors
Specifications
| Package | PW-X-4 |
| Packaging | Reel |
| Min. Pack | 1,000 |
| Vds - Drain-Source Breakdown Voltage | 10 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 0.8 V |
| Vgs - Gate-Source Voltage | 3 V |
| Type | RF Power MOSFET |
| Mounting Style | SMD/SMT |
| Product Category | RF MOSFET Transistors |
| Brand | Toshiba |
| Gain | 13.5 dB |
| Product Type | RF MOSFET Transistors |
| Id - Continuous Drain Current | 3 A |
| Output Power | 2.2 W |
| Operating Frequency | 470 MHz |
| RoHS | Y |
| Configuration | Single |
| Subcategory | MOSFETs |
| Series | 2SK3079 |
| Pd - Power Dissipation | 20 W |
| Technology | Si |
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