2SK2009TE85LF
- Manufacturer Toshiba
- Part Number 2SK2009TE85LF
- Description MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V
- Category MOSFET
Specifications
| Package | SOT-346-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 500 mV |
| Width | 1.5 mm |
| Vgs - Gate-Source Voltage | 2.5 V |
| Type | RF Small Signal MOSFET |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 0.000423 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 200 mA |
| Length | 2.9 mm |
| Rds On - Drain-Source Resistance | 2 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 0.12 us |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | 2SK2009 |
| Height | 1.1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 0.06 us |
| Pd - Power Dissipation | 200 mW |
| Technology | Si |
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