2SJ668(TE16L1,NQ)
- Manufacturer Toshiba
- Part Number 2SJ668(TE16L1,NQ)
- Description MOSFET MOSFET P-Ch 60V 5A Rdson=0.17Ohm
- Category MOSFET
Specifications
| Package | PW-Mold-3 |
| Packaging | Reel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | P-Channel |
| Width | 5.5 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 14 ns |
| Mounting Style | SMD/SMT |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 0.012804 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Id - Continuous Drain Current | 5 A |
| Length | 6.5 mm |
| Rds On - Drain-Source Resistance | 170 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | 2SJ668 |
| Height | 2.3 mm |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 20 W |
| Rise Time | 14 ns |
| Technology | Si |
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