2SJ360(F)
- Manufacturer Toshiba
- Part Number 2SJ360(F)
- Description MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V
- Category MOSFET
Specifications
| Package | SC-62-3 |
| Packaging | Reel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | P-Channel |
| Width | 2.5 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 20 ns |
| Mounting Style | SMD/SMT |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | Toshiba |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Id - Continuous Drain Current | 1 A |
| Length | 4.6 mm |
| Rds On - Drain-Source Resistance | 730 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | 2SJ360 |
| Height | 1.6 mm |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.5 W |
| Rise Time | 17 ns |
| Technology | Si |
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