2SD2679T100
- Manufacturer ROHM Semiconductor
- Part Number 2SD2679T100
- Description Bipolar Transistors - BJT BIPOLAR TRANSISTR 2A 30V
- Category Bipolar Transistors - BJT
Specifications
| Package | MPT-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 6 V |
| Part # Aliases | 2SD2679 |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | ROHM Semiconductor |
| DC Current Gain hFE Max | 680 at 200 mA, 2 V |
| Collector- Emitter Voltage VCEO Max | 30 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 280 MHz |
| Maximum DC Collector Current | 2 A |
| RoHS | Y |
| Continuous Collector Current | 2 A |
| Collector-Emitter Saturation Voltage | 180 mV |
| Configuration | Single |
| Subcategory | Transistors |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 30 V |
| Pd - Power Dissipation | 2 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 270 at 200 mA, 2 V |
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