2SD2662T100
- Manufacturer ROHM Semiconductor
- Part Number 2SD2662T100
- Description Bipolar Transistors - BJT TRANSISTOR BIPOLAR NPN; 30V 1.5A
- Category Bipolar Transistors - BJT
Specifications
| Package | MPT-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 6 V |
| Part # Aliases | 2SD2662 |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | ROHM Semiconductor |
| DC Current Gain hFE Max | 680 |
| Unit Weight | 0.004603 oz |
| Collector- Emitter Voltage VCEO Max | 30 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 330 MHz |
| Maximum DC Collector Current | 1.5 A |
| RoHS | Y |
| Continuous Collector Current | 1.5 A |
| Collector-Emitter Saturation Voltage | 160 mV |
| Configuration | Single |
| Subcategory | Transistors |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 30 V |
| Pd - Power Dissipation | 500 mW |
| DC Collector/Base Gain hfe Min | 270 |
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