2SD1223(TE16L1,NQ)
- Manufacturer Toshiba
- Part Number 2SD1223(TE16L1,NQ)
- Description Bipolar Transistors - BJT NPN VCEO 80V VCE 1.5 Ic 4A hFE 2000 min
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | Toshiba |
| Collector- Emitter Voltage VCEO Max | 80 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Maximum DC Collector Current | 4 A |
| RoHS | Y |
| Continuous Collector Current | 4 A |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Configuration | Single |
| Subcategory | Transistors |
| Series | 2SD1223 |
| Packaging | |
| Collector- Base Voltage VCBO | 100 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 15 W |
| DC Collector/Base Gain hfe Min | 2000 |
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