2SC5949-O(Q)
- Manufacturer Toshiba
- Part Number 2SC5949-O(Q)
- Description Bipolar Transistors - BJT Transistor NPN 200V 15A
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-3P-3 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 20.5 mm (Max) |
| Product Category | Bipolar Transistors - BJT |
| Brand | Toshiba |
| DC Current Gain hFE Max | 160 |
| Unit Weight | 0.238311 oz |
| Collector- Emitter Voltage VCEO Max | 200 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 30 MHz |
| Length | 26 mm |
| Maximum DC Collector Current | 15 A |
| RoHS | Y |
| Continuous Collector Current | 15 A |
| Collector-Emitter Saturation Voltage | 0.4 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | 2SC5949 |
| Height | 5.2 mm (Max) |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 200 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 220 W |
| DC Collector/Base Gain hfe Min | 55 |
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