2SC5706-P-E
- Manufacturer ON Semiconductor
- Part Number 2SC5706-P-E
- Description Bipolar Transistors - BJT BIP NPN 5A 50V
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-251-3 |
| Packaging | Bulk |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 6 V |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor |
| DC Current Gain hFE Max | 560 |
| Unit Weight | 0.011993 oz |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 400 MHz |
| RoHS | Y |
| Continuous Collector Current | 5 A |
| Collector-Emitter Saturation Voltage | 240 mV |
| Configuration | Single |
| Subcategory | Transistors |
| Series | 2SC5706 |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 100 V |
| Pd - Power Dissipation | 800 mW |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 200 |
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