2SC5354-1(F)
- Manufacturer Toshiba
- Part Number 2SC5354-1(F)
- Description Bipolar Transistors - BJT Transistor NPN 800V 5A
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-3P-N-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 7 V |
| Product Category | Bipolar Transistors - BJT |
| Brand | Toshiba |
| DC Current Gain hFE Max | 60 |
| Unit Weight | 0.194007 oz |
| Collector- Emitter Voltage VCEO Max | 800 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Maximum DC Collector Current | 5 A |
| RoHS | Y |
| Continuous Collector Current | 5 A |
| Collector-Emitter Saturation Voltage | 1 V |
| Configuration | Single |
| Subcategory | Transistors |
| Series | 2SC5354 |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 900 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 100 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 15 |
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