2SC3649T-TD-H
- Manufacturer ON Semiconductor
- Part Number 2SC3649T-TD-H
- Description Bipolar Transistors - BJT BIP NPN 1.5A 160V
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-89-3 |
| Min. Pack | 1 |
| Emitter- Base Voltage VEBO | 6 V |
| Collector-Emitter Saturation Voltage | 130 mV |
| Product Category | Bipolar Transistors - BJT |
| Transistor Polarity | NPN |
| Subcategory | Transistors |
| Product Type | BJTs - Bipolar Transistors |
| Series | 2SC3649 |
| Brand | ON Semiconductor |
| Maximum DC Collector Current | 1.5 A |
| Gain Bandwidth Product fT | 120 MHz |
| Collector- Emitter Voltage VCEO Max | 160 V |
| Pd - Power Dissipation | 500 mW |
| Mounting Style | Through Hole |
| Packaging | |
| Collector- Base Voltage VCBO | 180 V |
| Unit Weight | 0.001973 oz |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| RoHS | Y |
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