2SC3647S-TD-E
- Manufacturer ON Semiconductor
- Part Number 2SC3647S-TD-E
- Description Bipolar Transistors - BJT BIP NPN 2A 100V
- Category Bipolar Transistors - BJT
Specifications
| Package | PCP-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 6 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor |
| Unit Weight | 0.001819 oz |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 120 MHz |
| Maximum DC Collector Current | 3 A |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 0.13 V |
| Configuration | Single |
| Subcategory | Transistors |
| Series | 2SC3647 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 120 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.5 W |
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