2SC3326BTE85LF
- Manufacturer Toshiba
- Part Number 2SC3326BTE85LF
- Description Bipolar Transistors - BJT NPN 0.3A IC 20V Gen Purp Trans
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-346-3 |
| Packaging | Reel |
| Min. Pack | 3,000 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 25 V |
| Product Category | Bipolar Transistors - BJT |
| Brand | Toshiba |
| DC Current Gain hFE Max | 1200 |
| Collector- Emitter Voltage VCEO Max | 20 V |
| Configuration | Single |
| Maximum Operating Temperature | + 125 C |
| Gain Bandwidth Product fT | 30 MHz |
| Maximum DC Collector Current | 300 mA |
| RoHS | Y |
| Continuous Collector Current | 300 mA |
| Collector-Emitter Saturation Voltage | 0.042 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | 2SC3326 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 50 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 150 mW |
| DC Collector/Base Gain hfe Min | 200 |
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