2SC2713BLTE85LF
- Manufacturer Toshiba
- Part Number 2SC2713BLTE85LF
- Description Bipolar Transistors - BJT NPN 0.1A IC 120V Gen Purp Trans
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-346-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Toshiba |
| DC Current Gain hFE Max | 700 |
| Collector- Emitter Voltage VCEO Max | 120 V |
| Product Type | BJTs - Bipolar Transistors |
| Gain Bandwidth Product fT | 100 MHz |
| Maximum DC Collector Current | 100 mA |
| RoHS | Y |
| Continuous Collector Current | 100 mA |
| Collector-Emitter Saturation Voltage | 0.3 V |
| Configuration | Single |
| Subcategory | Transistors |
| Series | 2SC2713 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 120 V |
| Pd - Power Dissipation | 150 mW |
| DC Collector/Base Gain hfe Min | 200 |
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