2SB817C-1E
- Manufacturer ON Semiconductor
- Part Number 2SB817C-1E
- Description Bipolar Transistors - BJT BIP PNP 12A 140V
- Category Bipolar Transistors - BJT
Specifications
| Packaging | Tube |
| Min. Pack | 1 |
| Emitter- Base Voltage VEBO | 6 V |
| Collector-Emitter Saturation Voltage | 2 V |
| Product Category | Bipolar Transistors - BJT |
| Transistor Polarity | PNP |
| Subcategory | Transistors |
| Product Type | BJTs - Bipolar Transistors |
| Series | 2SB817C |
| Brand | ON Semiconductor |
| Pd - Power Dissipation | 120 W |
| DC Current Gain hFE Max | 200 A |
| Collector- Emitter Voltage VCEO Max | 140 V |
| Unit Weight | 0.204589 oz |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 160 V |
| Maximum DC Collector Current | 12 A |
| Continuous Collector Current | 12 A |
| Technology | Si |
| RoHS | Y |
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