2SB1182TLR
- Manufacturer ROHM Semiconductor
- Part Number 2SB1182TLR
- Description Bipolar Transistors - BJT PNP 32V 2A
- Category Bipolar Transistors - BJT
Specifications
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 5.5 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | ROHM Semiconductor |
| DC Current Gain hFE Max | 180 |
| Unit Weight | 0.009185 oz |
| Collector- Emitter Voltage VCEO Max | 32 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 6.5 mm |
| Maximum DC Collector Current | 2 A |
| RoHS | Y |
| Continuous Collector Current | - 2 A |
| Gain Bandwidth Product fT | 100 MHz |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | 2SB1182 |
| Height | 2.3 mm |
| Packaging | |
| Collector- Base Voltage VCBO | - 32 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 10000 mW |
| DC Collector/Base Gain hfe Min | 180 |
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