2SA2120-O(Q)
- Manufacturer Toshiba
- Part Number 2SA2120-O(Q)
- Description Bipolar Transistors - BJT Transistor PNP 200V 12A
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-3P-3 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 4.8 mm |
| Product Category | Bipolar Transistors - BJT |
| Brand | Toshiba |
| Unit Weight | 0.238311 oz |
| Collector- Emitter Voltage VCEO Max | 200 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Length | 15.9 mm |
| Maximum DC Collector Current | 12 A |
| RoHS | Y |
| Gain Bandwidth Product fT | 25 MHz |
| Configuration | Single |
| Subcategory | Transistors |
| Series | 2SA2120 |
| Height | 19 mm |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 200 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 200000 mW |
| DC Collector/Base Gain hfe Min | 80 at 1 A, 5 V |
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