2SA1971(TE12L,F)
- Manufacturer Toshiba
- Part Number 2SA1971(TE12L,F)
- Description Bipolar Transistors - BJT PWR TRANS PW-MINI IC=-0.5A V=
- Category Bipolar Transistors - BJT
Specifications
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 7 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Toshiba |
| DC Current Gain hFE Max | 450 |
| Collector- Emitter Voltage VCEO Max | - 400 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 35 MHz |
| Maximum DC Collector Current | - 1 A |
| RoHS | Y |
| Continuous Collector Current | - 0.5 A |
| Collector-Emitter Saturation Voltage | - 0.4 V |
| Configuration | Single |
| Subcategory | Transistors |
| Series | 2SA |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | - 400 V |
| Minimum Operating Temperature | - 55 C |
| DC Collector/Base Gain hfe Min | 140 |
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