2SA1618-GR(TE85L,F
- Manufacturer Toshiba
- Part Number 2SA1618-GR(TE85L,F
- Description Bipolar Transistors - BJT -150mA -50V
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-25-5 |
| Packaging | Reel |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 5 V |
| Width | 1.6 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | Toshiba |
| DC Current Gain hFE Max | 400 |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 125 C |
| Length | 2.9 mm |
| Maximum DC Collector Current | 0.15 A |
| RoHS | Y |
| Continuous Collector Current | - 150 mA |
| Gain Bandwidth Product fT | 80 MHz |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | 2SA1618 |
| Height | 1.1 mm |
| Collector- Base Voltage VCBO | - 50 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 300 mW |
| DC Collector/Base Gain hfe Min | 200 |
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