2SA1587GRTE85LF
- Manufacturer Toshiba
- Part Number 2SA1587GRTE85LF
- Description Bipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEO
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-323-3 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 5 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Toshiba |
| DC Current Gain hFE Max | 700 |
| Unit Weight | 0.000176 oz |
| Collector- Emitter Voltage VCEO Max | - 120 V |
| Configuration | Single |
| Maximum Operating Temperature | + 125 C |
| Gain Bandwidth Product fT | 100 MHz |
| Maximum DC Collector Current | - 100 mA |
| RoHS | Y |
| Continuous Collector Current | - 100 mA |
| Collector-Emitter Saturation Voltage | - 0.3 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | 2SA1587 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | - 120 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 100 mW |
| DC Collector/Base Gain hfe Min | 200 |
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