2SA1362-GR(T5L,F,T
- Manufacturer Toshiba
- Part Number 2SA1362-GR(T5L,F,T
- Description Bipolar Transistors - BJT Bipolar Small-Signal Transistors
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-346-3 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 1.5 mm |
| Product Category | Bipolar Transistors - BJT |
| Brand | Toshiba |
| DC Current Gain hFE Max | 200 at 100 mA, 1 V |
| Unit Weight | 0.000423 oz |
| Collector- Emitter Voltage VCEO Max | 15 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Length | 2.9 mm |
| Maximum DC Collector Current | 0.8 A |
| RoHS | Y |
| Gain Bandwidth Product fT | 120 MHz |
| Configuration | Single |
| Subcategory | Transistors |
| Series | 2SA1362 |
| Height | 1.1 mm |
| Collector- Base Voltage VCBO | 15 V |
| Pd - Power Dissipation | 200 mW |
| DC Collector/Base Gain hfe Min | 200 at 100 mA, 1 V |
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