2SA1298-Y(TE85L,F)
- Manufacturer Toshiba
- Part Number 2SA1298-Y(TE85L,F)
- Description Bipolar Transistors - BJT PNP Transistor -25V S-Mini -0.8A -0.4V
- Category Bipolar Transistors - BJT
Specifications
| Package | SC-59-3 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 5 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Toshiba |
| DC Current Gain hFE Max | 320 |
| Unit Weight | 0.000282 oz |
| Collector- Emitter Voltage VCEO Max | 25 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 120 MHz |
| Maximum DC Collector Current | 800 mA |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 0.4 V |
| Configuration | Single |
| Subcategory | Transistors |
| Series | 2SA1298 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 30 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 200 mW |
Need pricing on 2SA1298-Y(TE85L,F)?
Tell us your quantity and target price. We reply the same business day.