2N7002W
- Manufacturer ON Semiconductor / Fairchild
- Part Number 2N7002W
- Description MOSFET N-Chan Enhancement Mode Field Effect
- Category MOSFET
Specifications
| Package | SOT-323-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Width | 1.25 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Mounting Style | SMD/SMT |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.000176 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 115 mA |
| Length | 2 mm |
| Rds On - Drain-Source Resistance | 7.5 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 12.5 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | 2N7002W |
| Height | 1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 5.85 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 200 mW |
| Technology | Si |
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