2N7002DWH6327XT
- Manufacturer Infineon Technologies
- Part Number 2N7002DWH6327XT
- Description MOSFET N-Ch 60V 300mA SOT-363-6
- Category MOSFET
Specifications
| Package | SOT-363-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 1.6 Ohms |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Width | 1.25 mm |
| Qg - Gate Charge | 600 pC, 600 pC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | 2N7002DWH6327XTSA1 SP000917596 |
| Fall Time | 3.1 ns, 3.1 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.000265 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 200 mS, 200 mS |
| Id - Continuous Drain Current | 300 mA |
| Length | 2 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 5.5 ns, 5.5 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | 2N7002 |
| Height | 0.9 mm |
| Packaging | |
| Typical Turn-On Delay Time | 3 ns, 3 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 500 mW (1/2 W) |
| Rise Time | 3.3 ns, 3.3 ns |
| Technology | Si |
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