2N7000
- Manufacturer ON Semiconductor
- Part Number 2N7000
- Description MOSFET N-CHANNEL 60V 200mA
- Category MOSFET
Specifications
| Package | TO-92-3 |
| Packaging | Bulk |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Width | 4.19 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | 2N7000_NL |
| Type | FET |
| Mounting Style | Through Hole |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | ON Semiconductor |
| Unit Weight | 0.007055 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 0.1 S |
| Id - Continuous Drain Current | 200 mA |
| Length | 5.2 mm |
| Rds On - Drain-Source Resistance | 1.2 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | 2N7000 |
| Height | 5.33 mm |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 400 mW |
| Technology | Si |
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