2N6551
- Manufacturer Central Semiconductor
- Part Number 2N6551
- Description Bipolar Transistors - BJT NPN 120Vcbo 60Vceo 6.0Vebo
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-202-3 |
| Packaging | Bulk |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Part # Aliases | 2N6551 PBFREE |
| Product Category | Bipolar Transistors - BJT |
| Brand | Central Semiconductor |
| DC Current Gain hFE Max | 300 at 50 mA, 1 V |
| Collector- Emitter Voltage VCEO Max | 60 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 375 MHz |
| Maximum DC Collector Current | 2 A |
| RoHS | Y |
| Continuous Collector Current | 1 A |
| Collector-Emitter Saturation Voltage | 1 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | 2N6551 |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 60 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 10 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 25 at 500 mA, 1 V |
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