2N6517BU
- Manufacturer ON Semiconductor / Fairchild
- Part Number 2N6517BU
- Description Bipolar Transistors - BJT NPN Si Transistor Epitaxial
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-92-3 |
| Packaging | Bulk |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 6 V |
| Width | 3.93 mm |
| Part # Aliases | 2N6517BU_NL |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor / Fairchild |
| DC Current Gain hFE Max | 200 |
| Unit Weight | 0.006314 oz |
| Collector- Emitter Voltage VCEO Max | 350 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 200 MHz |
| Length | 4.7 mm |
| Maximum DC Collector Current | 0.5 A |
| RoHS | Y |
| Continuous Collector Current | 0.5 A |
| Collector-Emitter Saturation Voltage | 1 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | 2N6517 |
| Height | 4.7 mm |
| Collector- Base Voltage VCBO | 350 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 625 mW |
| DC Collector/Base Gain hfe Min | 30 |
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