2N6439
- Manufacturer Advanced Semiconductor, Inc.
- Part Number 2N6439
- Description RF Bipolar Transistors RF Transistor
- Category RF Bipolar Transistors
Specifications
| Package | 316-01 |
| Packaging | Tray |
| Min. Pack | 1 |
| Mounting Style | Screw Mount |
| Type | RF Bipolar Power |
| Product Category | RF Bipolar Transistors |
| Transistor Type | Bipolar Power |
| Subcategory | Transistors |
| Maximum Operating Temperature | + 200 C |
| DC Collector/Base Gain hfe Min | 10 |
| Pd - Power Dissipation | 146 W |
| Collector- Emitter Voltage VCEO Max | 33 V |
| Emitter- Base Voltage VEBO | 4 V |
| Gain Bandwidth Product fT | 400 MHz |
| Minimum Operating Temperature | - 65 C |
| Operating Frequency | 400 MHz |
| Transistor Polarity | NPN |
| Product Type | RF Bipolar Transistors |
| Technology | Si |
| Brand | Advanced Semiconductor, Inc. |
| RoHS | Y |
Need pricing on 2N6439?
Tell us your quantity and target price. We reply the same business day.