2N6212
- Manufacturer Central Semiconductor
- Part Number 2N6212
- Description Bipolar Transistors - BJT PNP 350Vcbo 300Vceo 6.0Vebo 2.0A 35W
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-66-2 |
| Packaging | Tube |
| Min. Pack | 90 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 6 V |
| Part # Aliases | 2N6212 PBFREE |
| Product Category | Bipolar Transistors - BJT |
| Brand | Central Semiconductor |
| DC Current Gain hFE Max | 100 |
| Collector- Emitter Voltage VCEO Max | 300 V |
| Configuration | Single |
| Maximum Operating Temperature | + 200 C |
| Gain Bandwidth Product fT | 20 MHz |
| Maximum DC Collector Current | 5 A |
| RoHS | Y |
| Continuous Collector Current | 2 A |
| Collector-Emitter Saturation Voltage | 1.6 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | 2N6212 |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 350 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 35 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 10 |
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