2N6029
- Manufacturer Central Semiconductor
- Part Number 2N6029
- Description Bipolar Transistors - BJT PNP Gen Pur Pwr
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-3-2 |
| Packaging | Tube |
| Min. Pack | 220 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 7 V |
| Part # Aliases | 2N6029 PBFREE |
| Product Category | Bipolar Transistors - BJT |
| Brand | Central Semiconductor |
| Unit Weight | 0.225789 oz |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 1 MHz |
| Maximum DC Collector Current | 16 A |
| RoHS | Y |
| Continuous Collector Current | 16 A |
| Collector-Emitter Saturation Voltage | 2 V |
| Subcategory | Transistors |
| Series | 2N6029 |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 100 V |
| Minimum Operating Temperature | - 60 C |
| Pd - Power Dissipation | 200 W |
| DC Collector/Base Gain hfe Min | 25 |
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