2N5581/TR
- Manufacturer Microchip / Microsemi
- Part Number 2N5581/TR
- Description Bipolar Transistors - BJT BJTs
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-206AB-3 |
| Packaging | Reel |
| Min. Pack | 200 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 6 V |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | Microchip / Microsemi |
| DC Current Gain hFE Max | 120 at 150 mA, 10 V |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 200 C |
| Maximum DC Collector Current | 800 mA |
| RoHS | N |
| Collector-Emitter Saturation Voltage | 0.3 V |
| Configuration | Single |
| Subcategory | Transistors |
| Collector- Base Voltage VCBO | 75 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 20 at 500 mA, 10 V |
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