2N5427
- Manufacturer Central Semiconductor
- Part Number 2N5427
- Description Bipolar Transistors - BJT NPN 80Vcbo 80Vceo 7.0A 40W 0.7Vce
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-66-2 |
| Packaging | Tube |
| Min. Pack | 90 |
| Transistor Polarity | NPN |
| Part # Aliases | 2N5427 PBFREE |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | Central Semiconductor |
| DC Current Gain hFE Max | 120 at 2 A |
| Collector- Emitter Voltage VCEO Max | 80 V |
| Product Type | BJTs - Bipolar Transistors |
| Gain Bandwidth Product fT | 30 MHz |
| RoHS | Y |
| Continuous Collector Current | 7 A |
| Collector-Emitter Saturation Voltage | 0.7 V |
| Configuration | Single |
| Subcategory | Transistors |
| Series | 2N54 |
| Collector- Base Voltage VCBO | 80 V |
| Pd - Power Dissipation | 40 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 30 at 2 A |
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