2N5401-F
- Manufacturer Rectron
- Part Number 2N5401-F
- Description Bipolar Transistors - BJT PNP 0.6A 150V Transistor
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-92-3 |
| Packaging | Ammo Pack |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 5 V |
| Product Category | Bipolar Transistors - BJT |
| Brand | Rectron |
| DC Current Gain hFE Max | 300 |
| Collector- Emitter Voltage VCEO Max | - 150 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 300 MHz |
| Maximum DC Collector Current | - 0.6 A |
| RoHS | Y |
| Continuous Collector Current | - 0.6 A |
| Collector-Emitter Saturation Voltage | - 0.5 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | 2N |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | - 160 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 625 mW |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 50 |
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