2N5401
- Manufacturer Central Semiconductor
- Part Number 2N5401
- Description Bipolar Transistors - BJT PNP Gen Pr Amp
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-92-3 |
| Packaging | Bulk |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 4.19 mm |
| Part # Aliases | |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | Central Semiconductor |
| Unit Weight | |
| Collector- Emitter Voltage VCEO Max | 150 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 300 MHz |
| Length | 5.21 mm |
| Maximum DC Collector Current | 0.6 A |
| RoHS | Y |
| Continuous Collector Current | - 600 mA |
| Collector-Emitter Saturation Voltage | 0.5 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | 2N5401 |
| Height | 5.33 mm |
| Collector- Base Voltage VCBO | 160 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 625 mW |
| DC Collector/Base Gain hfe Min | 50 |
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