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2N5367

  • Manufacturer Central Semiconductor
  • Part Number 2N5367
  • Description Bipolar Transistors - BJT PNP Vcbo 40V 40Vceo 4.0Vebo 300mA 625mW
  • Category Bipolar Transistors - BJT
Specifications
Package TO-92-3
Packaging Bulk
Min. Pack 1
Transistor Polarity PNP
Emitter- Base Voltage VEBO 4 V
Part # Aliases 2N5367 PBFREE
Product Category Bipolar Transistors - BJT
Brand Central Semiconductor
Unit Weight 0.007266 oz
Collector- Emitter Voltage VCEO Max 40 V
Product Type BJTs - Bipolar Transistors
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 250 MHz
RoHS Y
Continuous Collector Current 300 mA
Collector-Emitter Saturation Voltage 1 V
Configuration Single
Subcategory Transistors
Mounting Style Through Hole
Collector- Base Voltage VCBO 40 V
Minimum Operating Temperature - 65 C
Pd - Power Dissipation 625 mW
DC Collector/Base Gain hfe Min 75 at 300 mA, 5 V

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