2N5302G
- Manufacturer ON Semiconductor
- Part Number 2N5302G
- Description Bipolar Transistors - BJT 30A 60V 200W NPN
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-204-2 |
| Packaging | Tray |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Width | 26.67 mm |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor |
| Unit Weight | 0.423993 oz |
| Collector- Emitter Voltage VCEO Max | 60 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 2 MHz |
| Length | 39.37 mm |
| Maximum DC Collector Current | 30 A |
| RoHS | Y |
| Continuous Collector Current | 30 A |
| Collector-Emitter Saturation Voltage | 0.75 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | 2N5302 |
| Height | 8.51 mm |
| Collector- Base Voltage VCBO | 60 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 200 W |
| DC Collector/Base Gain hfe Min | 15 |
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