2N5296
- Manufacturer Central Semiconductor
- Part Number 2N5296
- Description Bipolar Transistors - BJT 60Vcbo 60Vcev 4.0A 50Vcer 40Vceo 36W
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-220-3 |
| Packaging | Bulk |
| Min. Pack | 1,200 |
| Transistor Polarity | NPN |
| Part # Aliases | 2N5296 PBFREE |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | Central Semiconductor |
| DC Current Gain hFE Max | 120 at 1 A, 4 V |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 0.8 MHz |
| RoHS | Y |
| Continuous Collector Current | 4 A |
| Collector-Emitter Saturation Voltage | 1 V |
| Configuration | Single |
| Subcategory | Transistors |
| Series | 2N5296 |
| Collector- Base Voltage VCBO | 60 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 36 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 30 at 1 A, 4 V |
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