2N5115e3
- Manufacturer Microchip / Microsemi
- Part Number 2N5115e3
- Description JFET JFETs
- Category JFET
Specifications
| Package | TO-18-3 |
| Packaging | Bulk |
| Min. Pack | 1 |
| Product Category | JFET |
| Transistor Polarity | P-Channel |
| Minimum Operating Temperature | - 65 C |
| Product Type | JFETs |
| Maximum Operating Temperature | + 200 C |
| Brand | Microchip / Microsemi |
| Pd - Power Dissipation | 500 mW |
| Gate-Source Cutoff Voltage | 3 V to 6 V |
| Mounting Style | Through Hole |
| Subcategory | Transistors |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Maximum Drain Gate Voltage | 30 V |
| Rds On - Drain-Source Resistance | 100 Ohms |
| Drain-Source Current at Vgs=0 | - 15 mA to - 60 mA |
| Vgs - Gate-Source Breakdown Voltage | 30 V |
| Configuration | Single |
| Technology | Si |
| RoHS | Y |
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