2N5087 TRA
- Manufacturer Central Semiconductor
- Part Number 2N5087 TRA
- Description Bipolar Transistors - BJT PNP 50Vcbo 50Vceo 3.0Vebo 625mW 1.5W
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-92-3 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 3 V |
| Part # Aliases | 2N5087 PBFREE TRA |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Central Semiconductor |
| DC Current Gain hFE Max | 800 at 100 uA, 5 V |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 40 MHz |
| RoHS | Y |
| Continuous Collector Current | 50 mA |
| Collector-Emitter Saturation Voltage | 0.3 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | 2N5087A |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 50 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 1.5 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 250 at 10 mA, 5 V |
Need pricing on 2N5087 TRA?
Tell us your quantity and target price. We reply the same business day.