2N4900
- Manufacturer Microchip / Microsemi
- Part Number 2N4900
- Description Bipolar Transistors - BJT Power BJT
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-66-2 |
| Packaging | Tray |
| Min. Pack | 1 |
| Emitter- Base Voltage VEBO | 5 V |
| Collector-Emitter Saturation Voltage | 1.3 V |
| Product Category | Bipolar Transistors - BJT |
| Transistor Polarity | PNP |
| Subcategory | Transistors |
| Product Type | BJTs - Bipolar Transistors |
| Brand | Microchip / Microsemi |
| Maximum DC Collector Current | 1 A |
| DC Current Gain hFE Max | 100 |
| Collector- Emitter Voltage VCEO Max | 80 V |
| Pd - Power Dissipation | 25 W |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 80 V |
| Configuration | Single |
| DC Collector/Base Gain hfe Min | 20 |
| RoHS | N |
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