2N4232
- Manufacturer Central Semiconductor
- Part Number 2N4232
- Description Bipolar Transistors - BJT 3.0A 35W 70Vcbo 60Vceo 2.0V
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-66-2 |
| Packaging | Tube |
| Min. Pack | 90 |
| Transistor Polarity | NPN |
| Part # Aliases | 2N4232 PBFREE |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | Central Semiconductor |
| DC Current Gain hFE Max | 100 at 1.5 A, 2 V |
| Collector- Emitter Voltage VCEO Max | 60 V |
| Product Type | BJTs - Bipolar Transistors |
| Gain Bandwidth Product fT | 4 MHz |
| RoHS | Y |
| Continuous Collector Current | 3 A |
| Collector-Emitter Saturation Voltage | 2 V |
| Configuration | Single |
| Subcategory | Transistors |
| Series | 2N42 |
| Collector- Base Voltage VCBO | 70 V |
| Pd - Power Dissipation | 35 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 25 at 1.5 A, 2 V |
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