2N4126 TRE
- Manufacturer Central Semiconductor
- Part Number 2N4126 TRE
- Description Bipolar Transistors - BJT 25Vcbo 25Vceo 4.0Vebo 200mA 625mW
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-92-3 |
| Packaging | Reel |
| Min. Pack | 6,000 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 4 V |
| Part # Aliases | 2N4126 PBFREE TRE |
| Product Category | Bipolar Transistors - BJT |
| Brand | Central Semiconductor |
| DC Current Gain hFE Max | 360 at 2 mA, 1 V |
| Collector- Emitter Voltage VCEO Max | 25 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 250 MHz |
| RoHS | Y |
| Continuous Collector Current | 200 mA |
| Collector-Emitter Saturation Voltage | 0.4 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | 2N4126E |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 25 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 1.5 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 60 at 50 mA, 1 V |
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