2N3906-G
- Manufacturer Comchip Technology
- Part Number 2N3906-G
- Description Bipolar Transistors - BJT -40V -200mA TO-92
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-92-3 |
| Packaging | Ammo Pack |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 5 V |
| Product Category | Bipolar Transistors - BJT |
| Brand | Comchip Technology |
| DC Current Gain hFE Max | 400 |
| Unit Weight | 0.016000 oz |
| Collector- Emitter Voltage VCEO Max | - 40 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 250 MHz |
| Maximum DC Collector Current | - 0.2 A |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | - 400 mV |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | 2N3906 |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | - 40 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 625 mW |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 30 |
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