2N3811
- Manufacturer Central Semiconductor
- Part Number 2N3811
- Description Bipolar Transistors - BJT PNP 60Vcbo 60Vces 5.0Vebo 50mA 500mW
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-78-6 |
| Packaging | Bulk |
| Min. Pack | 100 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 5 V |
| Part # Aliases | 2N3811 PBFREE |
| Product Category | Bipolar Transistors - BJT |
| Brand | Central Semiconductor |
| DC Current Gain hFE Max | 900 at 1 mA, 5 V |
| Collector- Emitter Voltage VCEO Max | 60 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 200 C |
| Gain Bandwidth Product fT | 500 MHz |
| RoHS | Y |
| Continuous Collector Current | 50 mA |
| Collector-Emitter Saturation Voltage | 0.25 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | 2N3811 |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 60 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 600 mW |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 75 at 1 uA, 5 V |
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