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2N3772G

  • Manufacturer ON Semiconductor
  • Part Number 2N3772G
  • Description Bipolar Transistors - BJT 20A 60V 150W NPN
  • Category Bipolar Transistors - BJT
Specifications
Package TO-204-2
Packaging Tray
Min. Pack 1
Transistor Polarity NPN
Emitter- Base Voltage VEBO 7 V
Width 26.67 mm
Mounting Style Through Hole
Product Category Bipolar Transistors - BJT
Brand ON Semiconductor
Unit Weight 0.408014 oz
Collector- Emitter Voltage VCEO Max 60 V
Configuration Single
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 200 kHz
Length 39.37 mm
Maximum DC Collector Current 20 A
RoHS Y
Continuous Collector Current 20 A
Collector-Emitter Saturation Voltage 1.4 V
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Series 2N3772
Height 8.51 mm
Collector- Base Voltage VCBO 100 V
Minimum Operating Temperature - 65 C
Pd - Power Dissipation 150 W
DC Collector/Base Gain hfe Min 15

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