2N3710
- Manufacturer Central Semiconductor
- Part Number 2N3710
- Description Bipolar Transistors - BJT NPN Gen Pur SS
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-92-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 6 V |
| Width | 4.19 mm |
| Product Category | Bipolar Transistors - BJT |
| Brand | Central Semiconductor |
| DC Current Gain hFE Max | 330 |
| Unit Weight | 0.016000 oz |
| Collector- Emitter Voltage VCEO Max | 30 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 5.21 mm |
| Maximum DC Collector Current | 200 mA |
| RoHS | T |
| Collector-Emitter Saturation Voltage | 1 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | 2N3710 |
| Height | 5.33 mm |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 30 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 625 mW |
| DC Collector/Base Gain hfe Min | 90 |
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