2N3505
- Manufacturer Central Semiconductor
- Part Number 2N3505
- Description Bipolar Transistors - BJT PNP Gen Pur SS
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-18 |
| Packaging | Bulk |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 5.84 mm |
| Part # Aliases | 2N3505 TIN/LEAD |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | Central Semiconductor |
| DC Current Gain hFE Max | 300 |
| Collector- Emitter Voltage VCEO Max | 60 V |
| Product Type | BJTs - Bipolar Transistors |
| Gain Bandwidth Product fT | 200 MHz |
| Length | 5.84 mm |
| Maximum DC Collector Current | 150 mA |
| RoHS | T |
| Collector-Emitter Saturation Voltage | 400 mV |
| Configuration | Single |
| Subcategory | Transistors |
| Series | 2N3505 |
| Height | 5.33 mm |
| Collector- Base Voltage VCBO | 60 V |
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