2N3501
- Manufacturer Central Semiconductor
- Part Number 2N3501
- Description Bipolar Transistors - BJT NPN Gen Pur SS
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-39-3 |
| Packaging | Bulk |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 6 V |
| Width | 9.4 mm |
| Part # Aliases | 2N3501 PBFREE |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | Central Semiconductor |
| DC Current Gain hFE Max | 300 |
| Unit Weight | 0.035486 oz |
| Collector- Emitter Voltage VCEO Max | 150 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 150 MHz |
| Length | 9.4 mm |
| Maximum DC Collector Current | 0.3 A |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 0.4 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | 2N3501 |
| Height | 6.6 mm |
| Collector- Base Voltage VCBO | 150 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 1000 mW |
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