2N3467L
- Manufacturer Microchip / Microsemi
- Part Number 2N3467L
- Description Bipolar Transistors - BJT Power BJT
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-5-3 |
| Packaging | Bulk |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 5 V |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | Microchip / Microsemi |
| DC Current Gain hFE Max | 120 at 500 mA, 1 VDC |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 175 C |
| Maximum DC Collector Current | 1 A |
| RoHS | N |
| Collector-Emitter Saturation Voltage | 350 mV |
| Configuration | Single |
| Subcategory | Transistors |
| Collector- Base Voltage VCBO | 40 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 40 at 500 mA, 1 VDC |
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