2N3117
- Manufacturer Central Semiconductor
- Part Number 2N3117
- Description Bipolar Transistors - BJT NPN Low Lvl SS
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-18 |
| Packaging | Bulk |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 6 V |
| Width | 5.84 mm |
| Part # Aliases | 2N3117 PBFREE |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| DC Collector/Base Gain hfe Min | 50 at 10 uA, 5 V |
| DC Current Gain hFE Max | 500 |
| Unit Weight | 0.011020 oz |
| Collector- Emitter Voltage VCEO Max | 60 V |
| Configuration | Single |
| Maximum Operating Temperature | + 200 C |
| Gain Bandwidth Product fT | 60 MHz |
| Length | 5.84 mm |
| Maximum DC Collector Current | 50 mA |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 350 mV |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | 2N3117 |
| Height | 5.33 mm |
| Collector- Base Voltage VCBO | 60 V |
| Brand | Central Semiconductor |
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